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 STPS1L20MF
Low drop power Schottky rectifier in flat package
Main product characteristics
A
IF(AV) VRRM Tj (max) VF (max) 1A 20 V 150 C 0.37 V
K STmite flat (DO222-AA)
Features and benefits

Very low profile package: 0.85 mm Backward compatible with standard STmite footprint Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop for higher efficiency and extended battery life Low thermal resistance Avalanche capability specified
Description
Single Schottky rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in STmite flat, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Due to the very small size of the package this device fits battery powered equipment (cellular, notebook, PDA's, printers) as well as chargers and PCMCIA cards.
Order Code
Part number STPS1L20MF Marking F1L2
Table 1.
Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt
1.
dPtot --------------dTj
Absolute ratings (limiting values)
Parameter Repetitive peak reverse voltage RMS forward voltage Average forward current Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature(1) Critical rate of rise of reverse voltage (rated VR, Tj = 25 C) Tc = 140 C = 0.5 tp = 10 ms sinusoidal tp = 1 s Tj = 25 C Value 20 2 1 50 1400 -65 to + 150 150 10000 Unit V A A A W C C V/s
1 < -------------------------- condition to avoid thermal runaway for a diode on its own heatsink Rth ( j - a )
August 2006
Rev 1
1/7
www.st.com
Characteristics
STPS1L20MF
1
Characteristics
Table 2.
Symbol Rth(j-c) Rth(j-a)
(1)
Thermal resistance
Parameter Junction to case Junction to ambient Value 20 250 Unit C/W C/W
1. Mounted with minimum recommended pad size, PC board FR4
Table 3.
Symbol
Static electrical characteristics
Parameter Tests conditions Tj = 25 C Tj = 85 C VR = VRRM Min. Typ 0.015 0.90 0.005 VR = 10 V 0.45 0.003 VR = 5 V 0.30 0.38 IF = 1 A 0.32 0.42 0.37 0.46 IF = 3 A 0.42 0.50 0.46 Max. 0.075 4.50 0.035 mA 2.50 0.025 1.60 0.43 0.37 0.47 0.42 V 0.53 0.49 0.60 0.56 Unit
IR (1)
Reverse leakage current
Tj = 25 C Tj = 85 C Tj = 25 C Tj = 85 C Tj = 25 C Tj = 85 C Tj = 25 C
VF (1)
Forward voltage drop
Tj = 85 C Tj = 25 C Tj = 85 C Tj = 25 C Tj = 85 C
IF = 2 A
IF = 4 A
1. Pulse test: = 380 s, < 2%
To evaluate the conduction losses use the following equation: P = 0.32 x IF(AV) + 0.05 IF2(RMS)
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STPS1L20MF
Characteristics
Figure 1.
Conduction losses versus average Figure 2. current
IF(AV)(A)
= 0.1 = 0.05 =1 = 0.2 = 0.5
1.1
Average forward current versus ambient temperature ( = 0.5)
PF(AV)(W)
0.50 0.45 0.40 0.35 0.30 0.25 0.5 0.20 0.15 0.10 0.05 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.4 1.0 0.9 0.8 0.7 0.6
Rth(j-a)=Rth(j-c)
Rth(j-a)=270C/W
T
0.3 0.2
IF(AV)(A)
=tp/T
1.0 1.1
0.1
tp
0.0 1.2 0 25 50
Tamb(C)
75 100 125 150
Figure 3.
Normalized avalanche power derating versus pulse duration
Figure 4.
Normalized avalanche power derating versus junction temperature
PARM(tp) PARM(1s)
1 1.2 1 0.1 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1
PARM(tp) PARM(25C)
0.01
tp(s)
10 100 1000
Tj(C)
0 25 50 75 100 125 150
Figure 5.
Reverse leakage current versus junction temperature (typical values)
Figure 6.
Reverse leakage current versus reverse voltage applied (typical values)
IM(A)
25 1.0 0.9 20 0.8 0.7 15
TC=25C
Zth(j-c)/Rth(j-c)
0.6 0.5
= 0.5
10
TC=75C
0.4 0.3
= 0.2 = 0.1 Single pulse
5
TC=125C
IM t
0.2 0.1 0.0
T
0 1.E-03
=0.5
t(s)
1.E-02 1.E-01 1.E+00
tp(s)
1.E-03 1.E-02
=tp/T
tp
1.E-01
1.E-04
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Characteristics
STPS1L20MF
Figure 7.
Reverse leakage currrent versus reverse voltage applied (typical values)
Figure 8.
Reverse leakage currrent versus junction temperature (typical values)
IR(mA)
1.E+02
Tj=150C
IR(mA)
1.E+02
VR=20V
1.E+01
Tj=125C
1.E+01
Tj=100C
1.E+00
Tj=75C
1.E+00
1.E-01
Tj=50C
1.E-01
1.E-02
Tj=25C
1.E-02
VR(V)
1.E-03 0 2 4 6 8 10 12 14 16 18 20 1.E-03 0 25 50
Tj(C)
75 100 125 150
Figure 9.
Junction capacitance versus reverse voltage applied (typical values)
Figure 10. Forward voltage drop versus forward current
C(pF)
1000
F=1MHz VOSC=30mVRMS Tj=25C
IFM(A)
2.0 1.8 1.6 1.4 1.2
Tj=85C (typical values) Tj=85C (maximum values)
100
1.0 0.8 0.6 0.4
VR(V)
10 1 10 100
0.2 0.0 0.00 0.05
VFM(V)
0.10 0.15 0.20 0.25 0.30 0.35
Tj=25C (maximum values)
0.40
0.45
0.50
Figure 11. Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4, Cu=35 m, typical values)
Rth(j-a)(C/W)
250
200
150
100
50
0 0 20 40 60 80
S(mm)
100 120 140 160 180 200
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STPS1L20MF
Package information
2
Package information
Table 4. STmite flat dimensions
Dimensions Ref. Millimeters Min.
E1 L L1
Inches Min. Typ. Max.
Typ. 0.85 0.55 0.85 0.15 1.90 3.80 2.95 0.55 2.40 0.60 0.35
Max. 0.95 0.65 1.00 0.25 2.05 3.90 3.10 0.80 2.60 0.75 0.50
A
L2
0.80 0.40 0.70 0.10 1.75 3.60 2.80 0.50 2.10 0.45 0.20
0.031 0.033 0.037 0.016 0.022 0.026 0.027 0.033 0.039 0.004 0.006 0.009 0.069 0.075 0.081 0.142 0.150 0.154 0.110 0.116 0.122 0.020 0.022 0.031 0.083 0.094 0.102 0.018 0.024 0.030 0.008 0.014 0.020
b
D b b2
b2 c D E E1 L L1 L2 L3
E
L3
c A
Figure 12. STmite flat recommended footprint (all dimensions in mm)
0.85 0.63 2.00 0.65
0.65
0.95
1.95
4.13
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
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Ordering information
STPS1L20MF
3
Ordering information
Part number STPS1L20MF Marking F1L2 Package STmite flat Weight 16 mg Base qty 12000 Delivery mode Tape and reel
4
Revision history
Date 21-Aug-2006 Revision 1 First issue. Changes
6/7
STPS1L20MF
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